Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs
(2009) Microelectronic Engineering — Vol. 86, n° 10, p. 2067-2071 (2009)
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- As MuGFETs are promising contenders for the end of the silicon Roadmap, their high-temperature behaviour needs to be addressed. In this work we investigate the variations of the subthreshold slope (SS) of double-gate devices and MuGFETs with intrinsic doping as a function of the temperature and fin width. Focus is placed on the superlinear behaviour of SS occurring above a certain temperature threshold. Numerical simulations are performed using Comsol MultiphysicsTM and a 1D analytical model is developed. The model, which includes the effect of film and gate oxide thickness, is shown to accurately fit the numerical data. A new definition for the subthreshold slope under high-temperature operation is proposed. The high-temperature subthreshold slope degradation is shown to increase with fin width.
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Lee, C.-W., Lederer, D., Afzalian, A., Yan, R., Dehdashti Akhavan, N., & Colinge, J.-P. (2009). Analytical model for the high-temperature behaviour of the subthreshold slope in MuGFETs. Microelectronic Engineering, 86(10), 2067-2071. https://doi.org/10.1016/j.mee.2009.01.061 (Original work published 2009)