Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection

Assaker, R.;Vandenbogaert, N.;Dupret, François

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  • Assaker, R.
    Author
  • Vandenbogaert, N.
    Author
  • Dupret, FrançoisUCLouvain
    Author
Abstract
A numerical model is developed to perform the dynamic and global simulation of Czochralski growth. The effect of melt convection is taken into account by means of an eddy viscosity flow model, which can represent the mixing effect of flow oscillations on the heat transfer. Our method is used to investigate the dynamics of the growth of a 40 cm silicon crystal.
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Assaker, R., Vandenbogaert, N., & Dupret, F. (1997). Time-dependent simulation of the growth of large silicon crystals by the Czochralski technique using a turbulent model for melt convection. Journal of Crystal Growth, 180(3-4), 450-460. https://doi.org/10.1016/S0022-0248(97)00240-6 (Original work published 1997)