Harmonic distorsion characterization of SOI MOSFETs
(2003) 33nd European Microwave Week EuMW’2003 – GAAS’2003 — Location: Munich, Germany (6.October.2003)
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- Abstract
- Harmonic Distortion (HD) of Partially and Fully Depleted Silicon-on-Insulator nMOSFETs is investigated through DC and Radio-Frequency (RF) characterization methods. Those techniques are compared and it demonstrates that in saturation, HD is dominated by the DC current-voltage characteristics and that the output conductance has to be taken into account. Accurate evaluation of HD at RF requires further measurements.
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Citations
Parvais, B., Cerdeira, A., Schreurs, D., & Raskin, J.-P. (2003). Harmonic distorsion characterization of SOI MOSFETs. Proceedings of the 33nd European Microwave Week EuMW’2003 – GAAS’2003, pp. 357-360. https://hdl.handle.net/2078.5/229437