High-performance broadband photodetection enabled by a GeP/MoS <sub>2</sub> van der Waals p–n heterostructure

Rehmat, Arslan;Asim, Muhammad;Khan, Muhammad;Pervez, Muhammad;Elahi, Ehsan;et.al.
(2026) Journal of Materials Chemistry C — (2026)

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Authors
  • Rehmat, ArslanDepartment of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague 616628, Czech Republic
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  • Asim, MuhammadDepartment of Physics & Astronomy, Sejong University, Seoul 05006, Republic of Korea
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  • Khan, Muhammadorcid-logoDepartment of Semiconductor Systems Engineering, Sejong University, Seoul 05006, Republic of Korea
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  • Pervez, Muhammadorcid-logoInstitute of Information and Communication Technologies, Electronics and Applied Mathematics, Université catholique de Louvain, 1348 Ottignies-Louvain-la-Neuve, Belgium
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  • Elahi, Ehsanorcid-logoDepartment of Inorganic Chemistry, University of Chemistry and Technology Prague, Prague 616628, Czech Republic
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Abstract
van der Waals (vdW) heterostructures based on two-dimensional (2D) semiconducting materials have been thoroughly investigated for practical applications. Recent studies on 2D materials have reignited interest in p-n junctions, with promising potential for applications in both electronics and optoelectro-nics. Here, we present a photodiode using a p-type GeP/n-type MoS 2 heterostructure with a strong diode rectification of 2.1 Â 10 4 , which confirms the creation of a high-quality p-n junction. The device has a high responsivity of about 754 A W À1 and a high external quantum efficiency (EQE) of about 5.35 Â 10 4 at a bias of 1 V along the source-drain. Photocurrent mapping shows intrinsic photovoltaic behaviour with a photocurrent of 0.39 mA under zero bias conditions, which is enhanced to 0.60 mA under reverse bias conditions and suppressed under forward bias conditions, which provides evidence of junction-dominated carrier separation. The measured photoresponse is sub-linear within a power-law with an exponent a = 0.65, and a stable response of the device with a rise and decay time of 165 milliseconds and 206 milliseconds, respectively, is achieved. These results point to the GeP/MoS 2 vdW heterostructure as a potential platform for high-performance visible light photodetectors with the possibility of extending into the near-infrared region.
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Rehmat, A., Asim, M., Khan, M., Pervez, M., Al-Kahtani, A., Khan, M., Abubakr, M., Nasim, M., Ahmad, F., Aslam, S., Haider, Z., & Elahi, E. (2026). High-performance broadband photodetection enabled by a GeP/MoS <sub>2</sub> van der Waals p–n heterostructure. Journal of Materials Chemistry C. Published. https://doi.org/10.1039/d6tc00531d (Original work published 2026)