Electron scattering in compensated bismuth
(1976) Physical Review. B, Solid State — Vol. 14, n° 12, p. 5156-5160 (1976)
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- Abstract
- Low-temperature transport measurements are reported for pure bismuth and for bismuth doped with equal amounts of tin and tellurium. Electrical resistivity and thermoelectric power data indicate that the compensated sample acts as a compensated semimetal with pronounced impurity scattering. If a rigid-band model and the validity of Matthiessen's rule are assumed, then it appears that the tin and tellurium act as a kind of neutral complex yielding a temperature independent scattering mechanism for electrons and holes.
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Issi, J.-P., Michenaud, J.-P., & Heremans, J. (1976). Electron scattering in compensated bismuth. Physical Review. B, Solid State, 14(12), 5156-5160. https://hdl.handle.net/2078.5/53774 (Original work published 1976)