Efficient polysilicon passivation layer for crosstalk reduction in high-resistivity SOI substrates

Ben Ali, Khaled;Roda Neve, Cesar;Gharsallah, A.;Raskin, Jean-Pierre
(2010) 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010) — Location: New Orleans, LA, USA (11.January.2010)

Files

No attached file found for this publication.

Details

Authors
  • Ben Ali, KhaledUCLouvain
    Author
  • Roda Neve, CesarUCLouvain
    Author
  • Gharsallah, A.
    Author
  • Raskin, Jean-PierreUCLouvain
    Author
Abstract
Substrate crosstalk and RF losses in HR-SOI, and the introduction of a stabilized polysilicon layer are deeply investigated. A new equivalent lumped circuit to model different substrate types and resistivities, and SiO/sub 2/-Si interface qualities is proposed and validated by simulation and experimental data. It is also valid to model the introduction of high-trap density at the interface, and it successfully explains the higher measured values of substrate crosstalk at low frequencies for HR-Si substrates.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Ben Ali, K., Roda Neve, C., Gharsallah, A., & Raskin, J.-P. (2010). Efficient polysilicon passivation layer for crosstalk reduction in high-resistivity SOI substrates. 2010 10th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems (SiRF 2010), p. 212-215. https://doi.org/10.1109/SMIC.2010.5422973