In-situ thermal annealing technique for process and radiation-induced defects in SOI MOS devices
(2023)
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- Abstract
- In this work, the presence of process and radiation-induced defects in field effect transistors is investigated using advanced analysis of low-frequency noise measurements. Then, a low-power in-situ thermal annealing technique is employed on two distinct devices based on two different technologies. This experiment demonstrates a total recovery from process-induced defects in corner transistors. An in-depth study of radiation-induced defects is conducted by investigating the physical characteristics of oxide defects. Experimental results show that both process and radiation-induced defects are neutralized at annealing temperatures up to 638 K. The electrical properties of the on-membrane PDSOI-based devices have fully recovered their original parameters after a total dose of 348 krad (si), with further decreases in noise levels after in-situ annealing. This novel technique has experimentally validated the concept of in-situ annealing and achieved an important milestone in the in-situ recovery circuits. Control loop systems for self-correction and real-time mitigation circuits could be the solution in harsh environments e.g. long-term space missions, and medical sterilization environments.
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Citations
Amor, S. (2023). In-situ thermal annealing technique for process and radiation-induced defects in SOI MOS devices. https://hdl.handle.net/2078.5/165046