Optimizing FinFET Geometry and Parasitics for RF Applications
(2008) IEEE International SOI Conference, SOI’2008 — Location: Hudson River Valley, New York, USA (6.October.2008)
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Kranti, A., Raskin, J.-P., & Armstrong, G. A. (2008). Optimizing FinFET Geometry and Parasitics for RF Applications. Proceedings of the IEEE International SOI Conference, SOI’2008, pp. 123-124. https://hdl.handle.net/2078.5/231153