Anti-reflection films and multilayer structures
(1976) NATO Advanced Study Institute on Solid State Imaging — Location: Louvain-la-Neuve, Belgium (3.September.1975)
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- Abstract
- The transmittance of multilayer structures is calculated for light incident normally on the active area of a photosensing device. A single anti-reflection silicon dioxide film on a silicon substrate and an air-SiO/sub 2/-polysilicon-SiO/sub 2/-Si structure are discussed in detail.
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Citations
Van de Wiele, F. (1976). Anti-reflection films and multilayer structures. In Jespers, P.G.; Van de Wiele, F.; White, M.H.; (ed.), NATO Advanced Study Institute on Solid State Imaging (p. p. 29-45). Noordhoff internat. publishing. https://hdl.handle.net/2078.5/229899