Photoluminescence of GaAs/AlGaAs heterojunctions in magnetic fields up to 50 T

Priest, AN;Nicholas, RJ;Cheng, HH;Van der Burgt, M;Foxon, CT;et.al.
(1998) 12th International Conference on Electronic Properties of 2-Dimensional Systems — Location: TOKYO(Japan) (22.September.1997)

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  • Priest, AN
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  • Nicholas, RJ
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  • Cheng, HH
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  • Van der Burgt, M
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  • Foxon, CT
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Abstract
We report measurements of photo-luminescence from GaAs/AlGaAs heterojunctions in the ultra-quantum limit. New features are observed for low electron densities at high magnetic field, which we suggest are associated with the formation of negatively charged excitons, both singlet and triplet states. The dependence of the spectra on temperature and carrier density are presented in support of this theory. (C) 1998 Elsevier Science B.V. All rights reserved.
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Priest, A., Nicholas, R., Cheng, H., Van der Burgt, M., Harris, J., & Foxon, C. (1998). Photoluminescence of GaAs/AlGaAs heterojunctions in magnetic fields up to 50 T. Physica B: Condensed Matter, 251, 562-565. https://doi.org/10.1016/S0921-4526(98)00186-0 (Original work published 1998)