The meta-stable dip (MSD) effect in SOI FinFETs
(2007) Microelectronic Engineering — Vol. 84, n° 4, p. 590-593 (2007)
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- Abstract
- The meta-stable dip (MSD) effect is demonstrated and characterized in SOI FinFETs. With ascending scan of front-gate voltage (V-G1), the magnitude of drain current (I-D) tends to be fixed within a specific region of the front-gate voltage and this leads to a dip of transconductance (g(m)). The dip width can be modulated through a control of bias condition or measurement speed such as back-gate voltage (V-G2), drain voltage (V-D) and step size of the front-gate voltage. From the dual-gate transient measurement, it is found that the MSD effect is highly dependent on the floating-body effect. In SOI FinFETs, the MSD effect is significantly affected by the fin width due to the fringing electric field of the lateral gates. (c) 2006 Elsevier B.V. All rights reserved.
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Citations
Yun, J.-G., Bawedin, M., Cristoloveanu, S., Flandre, D., & Lee, H.-D. (2007). The meta-stable dip (MSD) effect in SOI FinFETs. Microelectronic Engineering, 84(4), 590-593. https://doi.org/10.1016/j.mee.2006.11.012 (Original work published 2007)