A new isolation process for VLSI devices
(1988) Solid State Devices. Proceedings of the 17th European Solid State Device Research Conference, ESSDERC ’87 — Location: Bologna, Italy (14.September.1987)
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- Abstract
- Presents a new zero-bird's beak process which, with an additional photolithographic step, substitutes the thermal fully-recessed field oxide for a CVD oxide. With such a process devices present a very small narrow channel effect. Moreover, the use of a reference mask increases the process reproductivity and reduces the probability of the double-threshold voltage effect. The cross-section and electrical results are presented.
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Citations
Figueras, E., Coppee, J. L., & Van de Wiele, F. (1988). A new isolation process for VLSI devices. In Soncini, G.; Calzolari, P.U.; (ed.), Solid State Devices. Proceedings of the 17th European Solid StateDevice Research Conference, ESSDERC ’87 (p. p. 435-438). North-holland. https://hdl.handle.net/2078.5/221224