Static and high-frequency behavior and performance of Schottky-barrier, p-MOSFET devices
(2007) IEEE Transactions on Electron Devices — Vol. 54, n° 10, p. 2796-2802 (2007)
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- Abstract
- The dc and radio-frequency performance of 85-nm gate-length p-channel PtSi source/drain Schottky-barrier MOSFETs on two wafers with differing source/drain silicide anneal temperatures has been investigated. ON currents of 545 mA/mm and transconductances of 640 mS/mm are presented for bias conditions based on recommendations by the International Technology Roadmap for Semiconductors. Devices receiving silicide anneals at lower temperatures exhibit higher drive currents and transconductances, which is attributed to a lower Schottky barrier between source and channel. Unity-gain cutoff frequencies of up to 71 GHz are measured, which is considerably higher than comparable doped source/drain pMOS devices reported in literature. Improved high-frequency performance is attributed to high transconductance and low capacitance.
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Pearman, D. J., Pailloncy, G., Raskin, J.-P., Larson, J. M., Snyder, J. P., Parker, E. H. C., & Whall, T. E. (2007). Static and high-frequency behavior and performance of Schottky-barrier, p-MOSFET devices. IEEE Transactions on Electron Devices, 54(10), 2796-2802. https://doi.org/10.1109/TED.2007.904985 (Original work published 2007)