Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs
(2009) 39th European Solid-State Device Research Conference. ESSDERC 2009 — Location: Athens, Greece (14.September.2009)
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- Abstract
- The DC, analog and RF behaviors as well as the nonlinear characteristics are shown for the first time for submicron graded channel partially depleted SOI MOSFETs. Previously reported advantages of long graded channel devices are extended for downscaled submicron graded channel devices presented in this work. These advantages cover all aspects of operation, being DC, analog, RF and nonlinear performances, which are investigated in comparison with classical MOS devices. These results are confirmed through robust measurements and accurate characterization techniques supported by well established extraction methods, especially for RF and nonlinear regimes of operation.
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Emam, M., Pavanello, M. A., Danneville, F., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2009). Analog, RF and nonlinear behaviors of submicron graded channel partially depleted SOI MOSFETs. In Tsoukalas, D.; Dimoulas, A.; (ed.), 39th European Solid-State Device Research Conference. ESSDERC 2009 (p. p. 125-128). IEEE. https://doi.org/10.1109/ESSDERC.2009.5331397