Electromigration-induced drift in damascene vs. plasma-etched Al(Cu). Part I : Kinetics of Cu-depletion in polycrystalline interconnects
(2000) Journal of Applied Physics — Vol. 87, n° 1, p. 86-98 (2000)
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Proost, J., Witvrouw, A., Cosemans, P., D’Haen, J., & Maex, K. (2000). Electromigration-induced drift in damascene vs. plasma-etched Al(Cu). Part I : Kinetics of Cu-depletion in polycrystalline interconnects. Journal of Applied Physics, 87(1), 86-98. https://doi.org/10.1063/1.371830 (Original work published 2000)