High-Frequency noise in FDSOI MOSFETs: a Monte Carlo investigation
(2003) SPIE’s 1st International Symposium on Fluctuations and Noise — Location: Santa Fe, NM, USA (1.June.2003)
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- Abstract
- In this work, we study the static, dynamic and noise characteristics of FDSOI MOSFET’s by means of numerical simulations validated by comparison with experimental data. For this purpose, we use a 2D Ensemble Monte Carlo simulator, taking into account, in an appropriate manner, the physical topology of a fabricated 0.25 μm gate-length FDSOI transistor. Important effects appearing in real transistors, such as surface charges, contact resistances, impact ionization phenomena and extrinsic parasitics are included in the simulation. This allows to accurately reproduce the experimental behavior of static and dynamic parameters (output and transference characteristics, gm/ID ratio, capacitances, etc.). Moreover, due to the characteristics of our microscopic approach, results are explained by means of internal quantities such as concentration, velocity or energy of carriers. The results of the Monte Carlo simulations for the typical four noise parameters (NFmin, Rn, phase and module of Γopt) of the 0.25 μm FDSOI MOSFET also show an exceptional agreement with experimental data. Once the reliability of the simulator has been confirmed, a full study of the noise characteristics of the device (intrinsic noise sources, normalized α, β and C parameters, experimental noise figures of merit) is performed. Taking advantage of the possibilities of the Monte Carlo method as a pseudoexperimental approach, the influence on these noise characteristics of the variation of some geometry parameters (downscaling the gate length and thickness of the active layer) is evaluated an interpreted in terms of microscopic transport processes.
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Rengel, R., Mateos, J., Pardo, D., Gonzalez, T., Martin, M. J., Dambrine, G., Danneville, F., & Raskin, J.-P. (2003). High-Frequency noise in FDSOI MOSFETs: a Monte Carlo investigation. In edited by M. Jamal Deen, Zeynep Çelik-Butler, Michael A. Levinshtein (ed.), Proceedings of SPIE vol. 5113 Noise in Devices and Circuits (p. pp. 379-386). https://hdl.handle.net/2078.5/229279