Inversion layer at the interface of Schottky diodes
(1974) Solid-State Electronics — Vol. 17, n° 8, p. 825-833 (1974)
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- Abstract
- An inversion layer can be present at the metal-semiconductor interface of Schottky diodes with a high barrier and a lightly doped semiconductor. Its influence on the potential distribution and on the electric field distribution (especially on its maximum) is quite important and may be analyzed by means of an analytical model. The current characteristics calculated by the usual models are modified if one takes the inversion layer into account. In particular, the theoretical /b n/ of the Schottky diode is smaller than the value obtained from the usual depletion hypothesis, while the barrier height deduced from the experimental saturation current becomes larger. Excellent agreement between the experimental current characteristics of a PtSi-Si diode and the combined model of thermionic emission-diffusion is obtained if the inversion layer is considered.
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Demoulin, E., & van de Wiele, F. (1974). Inversion layer at the interface of Schottky diodes. Solid-State Electronics, 17(8), 825-833. https://hdl.handle.net/2078.5/149309 (Original work published 1974)