SOI Lateral PIN Diodes for Temperature and UV Sensing in Very Harsh Environments
(2009) IMAPS International Conference on High Temperature Electronics Network (HiTEN′09) — Location: Oxford/UK (13.September.2009)
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- Authors
- Abstract
- We study the use of lateral SOI PIN diodes as thermometers and Ultra-Violet photo-detectors in a large range of temperature from -175°C to 300°C and under radiations. These diodes indeed show very linear voltage vs temperature characteristics when biased with a constant current and can be successfully used in an integrated temperature sensor [1]. Similarly, they show high quantum efficiency for UV light sensing measured from -175°C to 125°C up to now. They have also been embedded in a dedicated readout circuit [2]. The diodes characteristics after neutron irradiation are also discussed. The diodes are implemented in two fully-depleted SOI technologies: UCL 2µm process and OKI 0.15µm industrial process [3, 4].
- Affiliations
Centro Universitário da FEI Department of Electrical Engineering
Citations
Rue, B., Bulteel, O., Flandre, D., de Souza, M., & Pavanello, M. A. (2009). SOI Lateral PIN Diodes for Temperature and UV Sensing in Very Harsh Environments. Proceedings of HiTEN′09, IMAPS International Conference on High Temperature Electronics Network. IMAPS International Conference on High Temperature Electronics Network (HiTEN′09), Oxford/UK. https://hdl.handle.net/2078.5/253307