Novel capacitor-less 1T-DRAM using MSD effect
(2006) 2006 IEEE International SOI Conference — Location: Niagara Falls, New York (USA) (2.October.2006)
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- Authors
- Abstract
- In this paper, we propose a different single-transistor capacitor-less DRAM which is operated at low drain voltage and enables low-power applications. The basic mechanism is the meta-stable dip (MSD) effect recently discovered (Bawedin et al., 2004, 2005). MSD gives rise to a hysteresis in ID(VG) curves and a dip in transconductance gm. We demonstrate by systematic measurements and simulations that MSDRAMs with long retention time can be achieved.
- Affiliations
Institut de Microélectronique, Electromagnétisme et Photonique (IMEP)
Citations
Bawedin, M., Cristoloveanu, S., & Flandre, D. (2006). Novel capacitor-less 1T-DRAM using MSD effect. IEEE Catalogue N°06CH37786, 109-110. https://hdl.handle.net/2078.5/253024