Three-terminal graphene single-electron transistor fabricated using feedbackcontrolled electroburning
(2015) Applied Physics Letters — Vol. 107, n° np, p. 4 p. (2015)
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- Abstract
- We report room-temperature Coulomb blockade in a single layer graphene three-terminal single-electron transistor fabricated using feedback-controlled electroburning. The small separation between the side gate electrode and the graphene quantum dot results in a gate coupling up to 3 times larger compared to the value found for the back gate electrode. This allows for an effective tuning between the conductive and Coulomb blocked state using a small side gate voltage of about 1V. The technique can potentially be used in the future to fabricate all-graphene based room temperature single-electron transistors or three terminal single molecule transistors with enhanced gate coupling.
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Citations
Puczkarski, P., Gehring, P., Lau, C. S., & et al. (2015). Three-terminal graphene single-electron transistor fabricated using feedbackcontrolled electroburning. Applied Physics Letters, 107(np), 4 p. https://doi.org/10.1063/1.4932133 (Original work published 2015)