Tungsten Metallization Technology for High-temperature Silicon-on-insulator Devices

Chen, Jian;Colinge, J.-P.
(1995) European-Materials-Research-Society 1994 Spring Meeting, Symposium E; High Temperature Electronics - Materials, Devices and Applications — Location: STRASBOURG(France) (24.May.1994)

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  • Chen, JianUCLouvain
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  • Colinge, J.-P.UCLouvain
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Abstract
Tungsten metallization technology has been developed for high temperature silicon-on-insulator devices and circuits. The experiments on tungsten evaporation, plasma etching, annealing and lift-off process for the contact pad will be described in detail. Contact resistances were measured and compared with that of an aluminum metallization system. No significant degradation was observed by static measurement from room temperature up to 320 degrees C.
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Chen, J., & Colinge, J.-P. (1995). Tungsten Metallization Technology for High-temperature Silicon-on-insulator Devices. Materials Science and Engineering B: Solid-State Materials for Advanced Technology, 29(1-3), 18-20. https://doi.org/10.1016/0921-5107(94)04030-8 (Original work published 1995)