Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride
(2018) ACS Nano — Vol. 12, n° 5, p. 4712-4718 (2018)
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- Authors
Piquemal-Banci, Maëlis 
- Abstract
- We report on the integration of atomically thin 2D insulating hexagonal boron nitride (h-BN) tunnel barriers into magnetic tunnel junctions (2D-MTJs) by fabricating two illustrative systems (Co/h-BN/Co and Co/h-BN/Fe) and by discussing h-BN potential for metallic spin filtering. The h-BN is directly grown by chemical vapor deposition on prepatterned Co and Fe stripes. Spin-transport measurements reveal tunnel magneto-resistances in these h-BN-based MTJs as high as 12% for Co/h-BN/ h-BN/Co and 50% for Co/h-BN/Fe. We analyze the spin polarizations of h- BN/Co and h-BN/Fe interfaces extracted from experimental spin signals in light of spin filtering at hybrid chemisorbed/ physisorbed h-BN, with support of ab initio calculations. These experiments illustrate the strong potential of h-BN for MTJs and are expected to ignite further investigations of 2D materials for large signal spin devices.
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Citations
Piquemal-Banci, M., Galceran, R., Godel, F., Caneva, S., Martin, M.-B., Weatherup, R. S., Kidambi, P. R., Bouzehouane, K., Xavier, S., Anane, A., Petroff, F., Fert, A., Dubois, S., Charlier, J.-C., Robertson, J., Hofmann, S., Dlubak, B., & Seneor, P. (2018). Insulator-to-Metallic Spin-Filtering in 2D-Magnetic Tunnel Junctions Based on Hexagonal Boron Nitride. ACS Nano, 12(5), 4712-4718. https://doi.org/10.1021/acsnano.8b01354 (Original work published 2018)