Nonlinear devices characterization and micromachining techniques for RF integrated circuits
(2004)
Files
Parvais_PhD_final.pdf
Open Access - Adobe PDF
- 4.08 MB
Details
- Authors
- Supervisors
- Raskin, Jean-Pierre
- Abstract
- The present work is dedicated to the development of high performance integrated circuits for wireless communications, by acting of three different levels: technologies, devices, and circuits. Silicon-on-Insulator (SOI) CMOS technology is used in the frame of this work. Micromachining technologies are also investigated for the fabrication of three-dimensional tunable capacitors. The reliability of micromachined thin-film devices is improved by the coating of silanes in both liquid- and vapor-phases. Since in telecommunication applications, distortion is responsible for the generation of spurious frequency bands, the linearity behavior of different SOI transistors is analyzed. The validity range of the existing low-frequency nonlinear characterization methods is discussed. New simple techniques valid at both low- and high-frequencies, are provided, based on the integral function method and on the Volterra series. Finally, the design of a crucial nonlinear circuit, the voltage-controlled oscillator, is introduced. The describing function formalism is used to evaluate the oscillation amplitude and is embedded in a design methodology. The frequency tuning by SOI varactors is analyzed in both small- and large-signal regimes.
- Affiliations
Citations
Parvais, B. (2004). Nonlinear devices characterization and micromachining techniques for RF integrated circuits. https://hdl.handle.net/2078.5/129137