A comprehensive analysis of the high-temperature off-state and subthreshold characteristics of SOI MOSFETs
(2000) Perspectives, Science and Technologies for Novel Silicon on Insulator Devices — ISBN: [978-0-7923-6117-6], 281-293, published
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- Thin-film SOI MOSFETs are known to have superior device properties for hightemperature applications, namely, latch-up free operation, smaller threshold voltage shifts, and much lower off-state leakage currents [1–3]. The aim of this work is a detailed characterization of the high-temperature off-state and subthreshold characteristics of SOI MOSFETs using simulations and measurements. It is shown that at high temperatures (200–300°C) both subthreshold and off-state characteristics of enhancement-mode devices can be explained in terms of diffusion models adjusted for high-temperature conditions.
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Rudenko, T., Lysenko, V. S., Kilchytska, V., & Rudenko, A. N. (2000). A comprehensive analysis of the high-temperature off-state and subthreshold characteristics of SOI MOSFETs. In F.Balestra, A.N.Nazarov, V.S.Lysenko (ed.), Perspectives, Science and Technologies for Novel Silicon on Insulator Devices (pp. 281-293). Kluwer. https://doi.org/10.1007/978-94-011-4261-8_27