RF antenna switch using Dynamic Threshold SOI MOSFET
(2011) 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11 — Location: Phoenix, Arizona, USA (28.January.2011)
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- Abstract
- The trade-off between insertion loss and isolation in RF antenna switches is critical for RF communication systems. Possible improvement through circuit design is limited. The implementation of RF antenna switch using an optimized technology or an innovative device architecture could be the solution to achieve better insertion loss and isolation. The dynamic threshold MOSFET is presented here as one possible solution.
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Citations
Emam, M., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2011). RF antenna switch using Dynamic Threshold SOI MOSFET. Proceedings of the 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11. Published. 11th Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems - SiRF′11, Phoenix, Arizona, USA. https://doi.org/10.1109/SIRF.2011.5719333