A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface
(2003) Materials Science Forum — Vol. 433-436, p. 547-550 (2003)
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Ólafsson, H. Ö., Sveinbjörnsson, E., Rudenko, T., Kilchytska, V., Tyagulski, I. P., & Osiyuk, I. N. (2003). A Study of the Shallow Electron Traps at the 4H-SiC/SiO2 Interface. Materials Science Forum, 433-436, 547-550. https://doi.org/10.4028/www.scientific.net/MSF.433-436.547 (Original work published 2003)