UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET
(2009) ECS Transactions — Vol. 19, n° 1, p. 339-344 (2009)
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UHVFabricationoftheYtterbiumSilicideasPotentialLowSchottkyBarrierS-DContactMaterialforN-TypeMOSFET.doc
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- Ytterbium silicide provides a low Schottky barrier height to electron on n-type silicon. This property makes this material very attractive for the realization of Source/Drain contacts for n-type MOSFETs. In this communication, the study of structural and electrical properties of YbSi2-x fabricated at different temperature in Ultra-High Vacuum condition without any protective layers is presented. N-type SB-MOSFETs with ytterbium silicide based S/D contacts were fabricated at optimal silicidation temperatures on SOI substrate with an ultra thin body.
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Yarekha, D. A., Larrieu, G., Breil, N., Dublois, E., Godey, S., Wallart, X., Soyer, C., Remiens, D., Reckinger, N., Tang, X., Laszcz, A., Ratjczak, J., & Halimaoui, A. (2009). UHV fabrication of the ytterbium silicide as potential low Schottky barrier S/D contact material for n-type MOSFET. ECS Transactions, 19(1), 339-344. https://doi.org/10.1149/1.3118961 (Original work published 2009)