Design and characterization of ultra-low-power SOI-CMOS IC temperature level detector
(2012) Electronics Letters — Vol. 48, n° 14, p. 842-844 (2012)
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- Authors
- Abstract
- Described are the design and characterisation of an ultra-low-power temperature level detector (TLD) and temperature sensor based on a silicon-on-insulator (SOI) CMOS integrated circuit (IC) for harsh environment applications. Since this IC is mainly for harsh environment applications (e.g. high temperatures and radiations), it has been designed and manufactured using the 1 µm high-temperature SOI-CMOS technology provided by X-FAB. The measured power dissipation of the TLD circuit is 9 µW at a supply voltage of 5 V and temperature of 27 °C, according to the measurement results of the manufactured design.
- Affiliations
University of Technology of Petronas Department of Electrical and Electronic Engineering, Ipoh
Citations
Assaad, M., Boufouss, E. H., Gérard, P., Francis, L., & Flandre, D. (2012). Design and characterization of ultra-low-power SOI-CMOS IC temperature level detector. Electronics Letters, 48(14), 842-844. https://doi.org/10.1049/el.2012.1279 (Original work published 2012)