30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC
(2007) Journal of Applied Physics — Vol. 101, p. 113533 (2007)
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- Abstract
- Well-controlled population of dislocations are introduced in 4H-SiC by bending in cantilever mode and annealing between 400 and 700°C. The introduced defects consist of double stacking faults, each bound by a pair of 30° Si(g) partial dislocations, and the expansion of which is asymmetric. The velocity of each individual 30° Si(g) pair is directly measured as a function of stress and temperature on the surface of samples etched after deformation. The activation energies of the 30° Si(g) partial dislocation pairs are strongly stress dependent, ranging between 1.25 and 1.7 eV. These values are lower than the ones derived from plasticity experiments. This is probably because 30° (Si(g) pairs and double stacking faults are generated in N-doped 4H-SiC (N=2 x 10(18) cm-3), with their development being promoted by quantum well action.
- Affiliations
Université Paul Cézanne, Aix-Marseille III Laboratoire TECSEN UMR 6122 CNRS
Citations
Idrissi, H., Pichaud, B., Regula, G., & Lancin, M. (2007). 30° Si(g) partial dislocation mobility in nitrogen-doped 4H-SiC. Journal of Applied Physics, 101, 113533. https://doi.org/10.1063/1.2745266 (Original work published 2007)