Behavior of a traveling-wave amplifier versus temperature in SOI technology
(2006) IEEE Transactions on Microwave Theory and Techniques — Vol. 54, n° 6, p. 2675-2683 (2006)
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- Abstract
- In this paper, the design and measurement results of a CMOS partially depleted silicon-on-insulator (SOI) traveling-wave amplifier (TWA) are presented. The four-stage TWA is designed with a single common source nMOSFET in each stage using a 130-nm SOI CMOS technology requiring a chip area of 0.75 mm2. A gain of 4.5 dB and a unity-gain bandwidth of 30 GHz are measured at 1.4-V supply voltage for a power consumption of 66 mW. The designed circuit has been characterized over a temperature range from 25 degC to 300 degC. The performance degradation on the gain of the TWA, the SOI transistors, as well as the microstrip lines used for the matching network are analyzed. Thanks to the introduction of a dynamic threshold-voltage MOSFET, a greater gain-bandwidth product under lower bias conditions is demonstrated
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Citations
Si Moussa, M., Pavageau, C., Simon, P., Danneville, F., Russat, J., Fel, N., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2006). Behavior of a traveling-wave amplifier versus temperature in SOI technology. IEEE Transactions on Microwave Theory and Techniques, 54(6), 2675-2683. https://doi.org/10.1109/TMTT.2006.872950 (Original work published 2006)