Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap
(2008) Journal of Applied Physics — Vol. 104, n° 10, p. 103523 (2008)
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Reckinger, N., Tang, X., Dubois, E., Godey, S., Wallart, X., Raskin, J.-P., & et al. (2008). Low Schottky barrier height for ErSi2−x/n-Si contacts formed with a Ti cap. Journal of Applied Physics, 104(10), 103523. https://hdl.handle.net/2078.5/168289 (Original work published 2008)