Temperature dependence of the magnetoresistance of InxGa1-xAs antidot lattices
(2004) Physical review. B, Condensed matter and materials physics — Vol. 54, n° 4, p. 2685-2690 (2004)
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- Abstract
- The magnetoresistance of two samples with antidot lattices fabricated in a two-dimensional electron gas in the lattice-matched In0.53Ga0.47As/InP system is studied as a function of temperature (3 K<T<120 K). Magnetoresistance peaks due to geometrical resonances are observed up to temperatures above 100 K. The purpose of this study is to provide experimental data on the dependence of the amplitude of the magnetoresistance peaks on temperature, along with mobility data in the same temperature range. The broadening of the peaks with increasing temperature is consistent with the thermal smearing of the Fermi surface. The reduction of the amplitude of the peaks is in part due to thermal smearing, but also to the increase in the electron-scattering rate. The temperature-dependent part of the electron-scattering time in antidot arrays is deduced from the amplitude reduction, and compared to the mobility relaxation time.
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Heremans, J., Fuller, B., Thrush, C., & Bayot, V. (2004). Temperature dependence of the magnetoresistance of InxGa1-xAs antidot lattices. Physical review. B, Condensed matter and materials physics, 54(4), 2685-2690. https://doi.org/10.1103/PhysRevB.54.2685 (Original work published 2004)