Electronic and transport properties of unbalanced sublattice N-doping in graphene

Lherbier, Aurélien;Botello Mendez, Andrés Rafael;Charlier, Jean-Christophe
(2013) Nano Letters : a journal dedicated to nanoscience and nanotechnology — Vol. 13, n° 4, p. 1446-1450 (2013)

Files

nl304351z.pdf
  • Open Access
  • Adobe PDF
  • 2.07 MB
Download

Details

Authors
Abstract
Using both first-principles techniques and a real-space Kubo-Greenwood approach, electronic and transport properties of nitrogen-doped graphene with a single sublattice preference are investigated. Such a breaking of the sublattice symmetry leads to the appearance of a true band gap in graphene electronic spectrum even for a random distribution of the N dopants. More surprisingly, a natural spatial separation of both types of charge carriers at the band edge is predicted, leading to a highly asymmetric electronic transport. Both the presence of a band gap, allowing large on/off ratio, and an asymmetric transport pave a new route toward efficient graphene-based field-effect transistors. © 2013 American Chemical Society.
Affiliations

Citations

  • APA
  • Chicago
  • FWB

Lherbier, A., Botello Mendez, A. R., & Charlier, J.-C. (2013). Electronic and transport properties of unbalanced sublattice N-doping in graphene. Nano Letters : a journal dedicated to nanoscience and nanotechnology, 13(4), 1446-1450. https://doi.org/10.1021/nl304351z (Original work published 2013)