Investigation of mechanical stress induced-double stacking faults in (11-20) N-doped 4H-SiC combining optical and transmission electron microscopy, contrast simulation, and dislocations core reconstruction

Lancin, M.;Regula, G.;Douin, J.;Idrissi, Hosni;Pichaud, B.;et.al.
(2006) International Conference on Silicon Carbide and Related Materials — Location: Pittsburgh, USA (2005)

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  • Lancin, M.
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  • Regula, G.
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  • Douin, J.
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  • Idrissi, HosniUCLouvain
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  • Pichaud, B.
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Abstract
Defects are introduced into (11-20) highly N-doped 4H-SiC by one surface scratch followed by annealing at 550°C or 700°C with or without an additional compressive stress. The defects are planar and always consist of double stacking faults dragged by a pair of partial dislocations. In a pair, the partial dislocations have the same line direction, Burgers vector and core composition. All the identified gliding dislocations have a silicon core. An analysis of their expansion during annealing proves that C(g) partial segments can be created but that C(g) partial dislocations are immobile.
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Lancin, M., Regula, G., Douin, J., Idrissi, H., Ottaviani, L., & Pichaud, B. (2006). Investigation of mechanical stress induced-double stacking faults in (11-20) N-doped 4H-SiC combining optical and transmission electron microscopy, contrast simulation, and dislocations core reconstruction. Materials Science Forum, 527-529, 379-382. https://doi.org/10.4028/www.scientific.net/MSF.527-529.379 (Original work published 2006)