DC and RF characteristics of a 60 nm FinFET for a wide temperature range

Tinoco, Julio;Parvais, Bertrand;Mercha, A.;Decoutere, S.;Raskin, Jean-Pierre
(2008) Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’08 — Location: Tyndall National Institute, Cork, Ireland (23.January.2008)

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  • Tinoco, JulioUCLouvain
    Author
  • Parvais, BertrandIMEC, Leuven, Belgium
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  • Mercha, A.IMEC, Leuven, Belgium
    Author
  • Decoutere, S.IMEC, Leuven, Belgium
    Author
  • Raskin, Jean-PierreUCLouvain
    Author
Abstract
DC and RF characteristics of n-type FinFET transistor over a wide temperature range, from 77 to 473K, are presented for the first time. We experimentally demonstrate that the impact of temperature on the main analog and RF factors of merit of FinFETs is similar to what it can be observed for classical deep submicron single gate MOSFETs.
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Tinoco, J., Parvais, B., Mercha, A., Decoutere, S., & Raskin, J.-P. (2008). DC and RF characteristics of a 60 nm FinFET for a wide temperature range. Proceedings of the Fourth Workshop of the Thematic Network on Silicon on Insulator technology, devices and circuits – EuroSOI’08, pp. 57-58. https://hdl.handle.net/2078.5/230132