Dependence of finFET RF performance on fin width
(2006) 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RF Systems — Location: San Diego, CA, USA (18.January.2006)
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- Abstract
- This work analyzes the radio frequency (RF) performance of 60-nm gate length finFETs, for which the DC behavior exhibits reduced SCE. The RF analysis is carried out as a function of the gate length as well as the fin width (W/sub fin/). Cut off frequencies (f/sub t/, f /sub max/) on the order of 100 GHz are reported for the first time. It is shown that W/sub fin/ has a large impact on those frequencies, due mainly to its effect on the access resistances. Nevertheless, it is also demonstrated that using optimized layout geometry, f/sub max/ values close to 170 GHz are to be expected.
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Lederer, D., Parvais, B., Mercha, A., Collaert, N., Jurczak, M., Raskin, J.-P., & Decoutere, S. (2006). Dependence of finFET RF performance on fin width. In Drayton, R.F.; (ed.), 2006 Topical Meeting on Silicon Monolithic Integrated Circuits in RFSystems (IEEE Cat. No.06EX1204) (p. 4 pp.). IEEE. https://hdl.handle.net/2078.5/231222