Experimental Demonstration of a Temperature-Sensitive VO <sub>2</sub> Memristor-Based Spiking Circuit in Stochastic Bursting Regime

Van Brandt, Léopold;Bidoul, Noémie;Ratier, Thomas;Zeng, Xi;Flandre, Denis;et.al.
(2026) 2026 IEEE 17th Latin America Symposium on Circuits and System (LASCAS) — Location: Arequipa, Peru (24.February.2026)

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Experimental_Demonstration_of_a_Temperature-Sensitive_VO2_Memristor-Based_Spiking_Circuit_in_Stochastic_Bursting_Regime.pdf
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Abstract
Most recent implementations of sensitive neurons based on resistive-switching materials operate in a always-spiking regime, i.e. as relaxation oscillators whose frequency encodes the stimulus. Envisioning future low-energy event-based neuro-morphic sensors, we have implemented a temperature-sensitive neuron with a memristor made of vanadium dioxide (VO 2), a phase-change material, capable of exhibiting a stochastic bursting behaviour when biased in subthreshold regime by a MOS transistor. We experimentally demonstrate this functionality by recording intermittent bursts of spikes separated by quiescent periods of time, a behaviour reminiscent of excitable systems. Distinct bursts are unambiguously identified through a rigorous interquartile range method. Temperature is encoded into the temporal characteristics, i.e. the full statistical distribution of these bursts thanks to the temperature dependence of VO 2 transition parameters. The bursts duration and number of spikes per burst are experimentally found to follow an exponential distribution, in agreement with the general theory of Markovian bistable systems. The observed phenomenon could be explained by a noise-induced transient escape from a stable equilibrium to a limit cycle.
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Van Brandt, L., Bidoul, N., Ratier, T., Zeng, X., Delvenne, J.-C., & Flandre, D. (2026). Experimental Demonstration of a Temperature-Sensitive VO <sub>2</sub> Memristor-Based Spiking Circuit in Stochastic Bursting Regime. IEEE, /(/), 1-5. https://doi.org/10.1109/lascas67804.2026.11457126 (Original work published 2026)