New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures

Ólafsson, H. Ö., Sveinbjörnsson, E., Rudenko, T., Kilchytska, V., Tyagulski, I. P., & Osiyuk, I. N. (2002). New Evidence of Interfacial Oxide Traps in n-Type 4H- and 6H-SiC MOS Structures. Materials Science Forum, 389-393, 1001-1004. https://doi.org/10.4028/www.scientific.net/MSF.389-393.1001 (Original work published 2002)