New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures
(2001) 2001 International conference on silicon carbide and related materials (ICSCRM 2001) — Location: Tsukuba (Japan) (28.October.2001)
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Olafsson, H. O., Sveinbjornsson, E. O., Rudenko, T., Kilchytska, V., Tyagulski, I., & Osiyuk, I. (2001). New evidence of interfacial oxide traps in n-type 4H- and 6H-SiC MOS structures. In S.Yoshida, S.Nishino, T.Kimoto (ed.), Material Science Forum Series (p. p. 1001-1004). Trans Tech Publications. https://hdl.handle.net/2078.5/253213