Performances estimation of junctionless multigate transistors
(2009) Solid-State Electronics — Vol. 54, n° 3, p. 97-103 (2009)
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- Abstract
- This paper describes the simulation of the electrical characteristics of a new transistor concept called the ‘‘Junctionless Multigate Field-Effect Transistor (MuGFET)”. The proposed device has no junctions, a simpler fabrication process, less variability and better electrical properties than classical inversion-mode devices with PN junctions at the source and drain. The simulation results indicate that the junctionless MuGFET is a very promising candidate for future decananometer MOSFET applications.
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Citations
Lee, C.-W., Ferain, I., Afzalian, A., Yan, R., Dehdashti Akhavan, N., Razavi, P., & Colinge, J.-P. (2009). Performances estimation of junctionless multigate transistors. Solid-State Electronics, 54(3), 97-103. https://doi.org/10.1016/j.sse.2009.12.003 (Original work published 2009)