Suspended Silicon-on-Insulator Nanowires for Fabrication of Quadruple Gate MOSFET's
(2006) Workshop on Silicon Nanodevices “Beyond CMOS: Emerging Nanodevices — Location: Aachen, Germany (7.November.2006)
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- Abstract
- Scaling of MOSFET physical dimensions is approaching the nanoscale regime, which causes increase of short-channel effects such that the electrical performance of classical MOSFET structure is becoming seriously degraded. The limits of silicon scaling have been the major challenge for technologists for the past years. With the 90 nm generation in production and despite many roadblocks, the latest International Roadmap for Semiconductors 2005 expects that CMOS can be scaled down to 16 nm, by introducing new transistor architectures and materials. In this paper, we propose fabrication of a non-classical device architecture namely the “Quadruple-Gate MOSFET” which is based on definition of narrow, suspended silicon fins defined by electron-beam lithography into the topsilicon film of a Silicon-on-Insulator (SOI) wafer.
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Passi, V., Bolten, J., Mollenhauer, T., Wahlbrink, T., Lemme, M.-C., Kurz, H., & Raskin, J.-P. (2006). Suspended Silicon-on-Insulator Nanowires for Fabrication of Quadruple Gate MOSFET’s. Proceedings of the Workshop on Silicon Nanodevices “Beyond CMOS: Emerging Nanodevices, p. Paper 11. https://hdl.handle.net/2078.5/229529