Design of a distributed oscillator in 130 nm SOI MOS technology
(2006) Proceedings of the 36th European Microwave Conference — Location: Manchester, UK (10.September.2006)
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- Abstract
- In this paper, the design and the results of a silicon-on-insulator (SOI) CMOS distributed amplifier (DA) and oscillator are presented. The four stage cascode DA (CDA) is designed with a 130 nm SOI floating body n-MOSFET in each stage requiring a chip area of 0.75 mm/sup 2/. A gain of 7 dB and a unity-gain bandwidth of 26 GHz are measured at 1.4 V supply voltage with a measured power consumption of 54 mW. The CDA circuit has been extended to design a cascode distributed oscillator (CDO) showing a 3 dBm carrier at 10 GHz oscillating frequency, for 2.5 V supply voltage.
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Citations
Si Moussa, M., Pavageau, C., Picheta, L., Danneville, F., Russat, J., Fel, N., Raskin, J.-P., & Vanhoenacker-Janvier, D. (2006). Design of a distributed oscillator in 130 nm SOI MOS technology. Proceedings of the 36th European Microwave Conference (IEEE Cat.No.06EX1409), 4 pp. https://hdl.handle.net/2078.5/230988