Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes

Rudenko, Tamara;Kilchytska, Valeriya
(2000) NATO Advanced Research Workshop on “Perspectives, Science and Technologies for Novel Silicon on Insulator Devices” — Location: Kiev (Ukraine) (15.October.2000)

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  • Rudenko, TamaraLashkaryov Institute of Semiconductor Physics, Kiev
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  • Kilchytska, ValeriyaUCLouvain
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Abstract
Generation-recombination (g-r) parameters are of great importance for SOI devices, because they determine junction leakage, bipolar effects, and various floating body effects. On the other hand, g-r parameters are the measure of the material and processing quality. In SOI devices, g-r parameters are generally determined from the transient drain current response of a SOI MOSFET to front- or back-gate pulses [1–3]. These measurements usually allow extracting the carrier lifetime without details as to the origin of g-r mechanisms. In this work, we discuss the gated-diode method based on d. c. measurements, which provides more detailed information about g-r processes [1,4]. The gated-diode method is widely used in a bulk-Si technology, because it enables easily to separate volume- and surface-related component [4]. In thin-film SOI devices, the behavior of g-r currents is more complicated due to interface coupling, the specific free carrier concentration distribution, and superposition of volume and surface components. Generally numerical simulation is required for the correct determination of g-r parameters in thin-film SOI devices.
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Rudenko, T., & Kilchytska, V. (2000). Modeling and measurements of generation and recombination currents in thin-film SOI gated-diodes. Proceedings of the NATO Advanced Research Workshop on “Perspectives, Science and Technologies for Novel Silicon on Insulator Devices”. Published. NATO Advanced Research Workshop on “Perspectives, Science and Technologies for Novel Silicon on Insulator Devices”, Kiev (Ukraine). https://hdl.handle.net/2078.5/253115