Quasi-optical technique for sensing bond quality of silicon wafers
(2010) Micro-Optics 2010 — Location: Brussels, Belgium (12.April.2010)
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- Abstract
- In this paper, we investigate a novel fast and reliable method to check the bonding quality of silicon wafers. It is based on illuminating the wafers with a high frequency waves (110 - 170 GHz) using quasi-optical technique. The reflected energy is used to evaluate the bonding strength. The reported experimental study is compared with the Infrared images.
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Citations
Elhawil, A., Huynen, I., Raskin, J.-P., Roda Neve, C., Olbrechts, B., Stiens, J., & Vounckx, R. (2010). Quasi-optical technique for sensing bond quality of silicon wafers. Micro-Optics 2010, Vol. 7716, 77161R (7 pp.). https://doi.org/10.1117/12.853667