On-wafer wideband electrical characterization: a powerful tool for improving the IC technologies
(2006) 7th Diagnostics & Yield Symposium — Location: Warzaw, Poland (26.June.2006)
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- Abstract
- In the present paper, the interest of wideband characterization for the development of integrated technologies is highlighted through several advanced devices, such as 120 nm partially depleted (PD) silicon-on-insulator (SOI) MOSFETs, 120 nm dynamic threshold (DT) voltage – SOI MOSFETs, 50 nm FinFETs as well as long-channel planar double gate (DG) MOSFETs.
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Citations
Lederer, D., & Raskin, J.-P. (2006). On-wafer wideband electrical characterization: a powerful tool for improving the IC technologies. Proceedings of the 7th Diagnostics & Yield Symposium, p. Paper 21. https://hdl.handle.net/2078.5/231930