Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2
(2009)
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- Authors
- Supervisors
- SPORKEN, Robert
- Abstract
- (en) This Ph. D. thesis is dedicated to the study of selective growth by molecular beam epitaxy of CdTe on CdTe(211)B and Si(100) islands patterned on SiO2. These islands have a micro- and nanometer scale size and act as seeds for the growth of CdTe. These structures are patterned by optical and interferometric lithography. The selective process is explained by a difference in the physisorption energy of the adsorbed atoms of cadmium and telluride depending on the substrate (CdTe, Si or SiO2).
- Affiliations
Citations
Seldrum, T. (2009). Selective Growth of CdTe by Molecular Beam Epitaxy on CdTe(211)B Microseeds and Si(100) Nanoseeds Patterned on SiO2. https://hdl.handle.net/2078.5/132554