Characterization of ytterbium silicide formed in ultra high vacuum
(2010) 16th International Conference on Microscopy of Semiconducting Materials — Location: Oxford, UK (17.March.2009)
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- The formation of ytterbium silicide fabricated by annealing at 480 degrees C for one hour has been studied by means of high resolution transmission electron microscopy (HRTEM) and energy dispersive X-ray spectroscopy (EDS). The annealing process has been performed under ultra high vacuum (UHV) conditions. The formation of an amorphous silicide layer was observed between the Yb-layer and the silicon substrate in the as-deposited sample. Ytterbium silicide observed after annealing consists of two different layers: crystalline and amorphous ones. The studies confirmed that the formed crystalline layer is of the YbSi/sub 2-x/ phase, however, the structure is different from the hexagonal AlB/sub 2/ type.
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Laszcz, A., Ratajczak, J., Czerwinski, A., Katcki, J., Srot, V., Phillipp, F., van Aken, P. A., Yarekha, D., Reckinger, N., Larrieu, G., & Dubois, E. (2010). Characterization of ytterbium silicide formed in ultra high vacuum. 16th International Conference on Microscopy of Semiconducting Materials, Vol. 209, 012056 (4 pp.). https://doi.org/10.1088/1742-6596/209/1/012056