An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics

Dehan, M.;Vanhoenacker-Janvier, Danielle;Raskin, Jean-Pierre
(2001) Ultimate Integration of Silicon - ULIS′2001 Workshop — Location: Grenoble (France) (18.January.2001)

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Dehan, M., Vanhoenacker-Janvier, D., & Raskin, J.-P. (2001). An asymmetric channel SOI nMOSFET for improving DC and microwave characteristics. Ultimate Integration of Silicon - ULIS′2001 Workshop, Grenoble (France). https://hdl.handle.net/2078.5/228358