Planar metallizations on surface-passivated semiconductor substrates have become a familiar form of signal transmission with the rapid development of the monolithic integrated circuit technology now extending into the microwave frequency region. However, little is known at present concerning the transmission properties of such a composite structure. In this paper we present the behaviour of the SOI substrate as function of frequency. A new model of transmission line is developed and compared with measurements of CPW lines realized on various SIMOX substrates.
Raskin, J.-P., Huynen, I., Gillon, R., Vanhoenacker-Janvier, D., & Colinge, J.-P. (1996). An efficient design tool for transmission line on SIMOX substrates. Proceedings of the 1996 IEEE International SOI Conference, pp. 128-129. https://doi.org/10.1109/SOI.1996.552477