High temperature RF behavior of SOI MOSFETs for low-power low-voltage applications
(2008) 2008 IEEE International SOI Conference — Location: New Paltz, NY, USA (6.October.2008)
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- Abstract
- At zero-temperature-coefficient bias points, transistors are known to have stable DC performance with temperature variation. In this work, the RF behavior at those specific bias points is presented in order to provide design guidelines for low-power low-voltage circuits featuring stable RF performance in variable temperature environments and applications. Fully- and partially depleted SOI MOSFETs with and without body contact are analyzed.
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Citations
Emam, M., Vanhoenacker-Janvier, D., Anil, K., Ida, J., & Raskin, J.-P. (2008). High temperature RF behavior of SOI MOSFETs for low-power low-voltage applications. 2008 IEEE International SOI Conference, p. 139-140. https://doi.org/10.1109/SOI.2008.4656333